QH20TZ650
Ultra-Fast Silicon Diode
- VRRM - 600 V, 625 V. 650 V
- IF(AVG) - 3 A - 30 A
- QRR - 5.9 nC - 180 nC
Applications
Product Details
Qspeed diodes have the lowest QRR of any Silicon diode. Their recovery characteristics increase efficiency, reduce EMI and eliminate snubbers.
Product Highlights
Features
- Now available in TO-263 (D2PAK) package
- Low QRR, Low IRRM, Low tRR
- High dIF/dt capable (1000A/µs)
- Soft recovery
Benefits
- Increases efficiency
- Eliminates need for snubber circuits
- Reduces EMI filter component size & count
- Enables extremely fast switching
Applications
- Power Factor Correction (PFC) Boost Diode
- Motor drive circuits
- DC-AC Inverters
Related Information
Simulate Qspeed diodes on PowerEsim
Power Integrations has partnered with PowerEsim to bring you a fast and accurate way to simulate the superior performance of Qspeed products. Follow the link by clicking on the PowerEsim logo below.
Specifications
| Current - Forward (avg) | 20.00 A |
| Reverse Recovery Charge @25°C | 51.00 nC |
| Reverse Recovery Charge @125°C | 140.00 nC |
| Voltage - Forward (typ) | 2.65 V |
| Voltage - Reverse Recovery (Max) | 650.00V |
| IC Package | TO-220AC |
| Mounting Type | Surface Mount |
| Temperature - Operating (Min) | -55 °C |
| Temperature - Operating (Max) | 150 °C |
| Topology | Boost PFC |
| Product Sub-Type | Diode |
