Product Flyer – SiC MOSFET Gate Driver Cores 600 V – 3300 V
SiC MOSFET Gate Driver Cores (600 V – 3300 V) with variable gate voltage by VEE circuit (0 V – 25 V, 0 V – 10 V)
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The world's first 1700 V GaN switch is now available in InnoMux-2 flyback switcher ICs for multiple independently regulated outputs. Learn More
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