LXA10T600
Fast Silicon Diode with Balanced EMI and Switching Speed
- VRRM - 600 V
- IF(AVG) - 3 A - 20 A
- QRR - 21 nC - 51 nC
Applications
Product Details
Qspeed diodes have the lowest QRR of any Silicon diode. Their recovery characteristics increase efficiency, reduce EMI and eliminate snubbers.
Product Highlights
Features
- Low QRR, Low IRRM, Low tRR
- High dIF/dt capable (1000A/µs)
- Soft recovery
Benefits
- Increases efficiency
- Eliminates need for snubber circuits
- Reduces EMI filter component size & count
- Enables extremely fast switching
Applications
- Power Factor Correction (PFC) Boost Diode
- Motor drive circuits
- DC-AC Inverters
Related Information
Simulate Qspeed diodes on PowerEsim
Power Integrations has partnered with PowerEsim to bring you a fast and accurate way to simulate the superior performance of Qspeed products. Follow the link by clicking on the PowerEsim logo below.
Specifications
| Current - Forward (avg) | 10.00 A |
| Voltage - Forward (typ) | 2.10 V |
| Voltage - Reverse Recovery (Max) | 600.00V |
| IC Package | TO-220AC |
| Mounting Type | Through Hole |
| Temperature - Operating (Min) | -55 °C |
| Temperature - Operating (Max) | 150 °C |
| Product Sub-Type | Diode |
