2SP0230
Gate Driver for Driving 62mm SiC-MOSFET and Si-IGBT modules up to 1700 V via Electrical Interface
애플리케이션
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제품
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데이터 시트
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IGBT 전압 등급
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모듈 하우징
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지원되는 모듈
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IGBT 제조업체
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지원되는 모듈 유형
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게이트 턴온 전압
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게이트 턴 오프 전압
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지원되는 토폴로지
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보호 기능
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기술
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공급 전압 (일반)
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출력 전력 / 채널-최대
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IGBT에 대한 연결 유형
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드라이브 모드
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게이트 피크 전류 (최대)
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인터페이스 유형
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격리 기술
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격리 유형
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논리 입력 전압
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최대 스위칭 주파수
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채널 수
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작동 온도 (최소)
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작동 온도 (최대)
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보관 온도 (최소) (°C)
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보관 온도 (최대) (°C)
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Data Sheet
View Data Sheet
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IGBT Voltage Class
1200 V
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Module Housing
62mm
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Supported Module(s)
2MBI300XHA120-50
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IGBT Manufacturer
Fuji
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Supported Module Type
IGBT
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Gate Turn-on Voltage
+15.0 V
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Gate Turn-off Voltage
-10.0 V
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Supported Topologies
2단계 전압 소스, 3단계 NP 클램프 - 유형 1, 3단계 NP 클램프 - 유형 2
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Protection Features
고급 능동 클램핑, 과전압, 단락, 저전압 (2차측), 저전압 (1차측)
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Technology
SCALE-2
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Supply Voltage (Typ)
15 V
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Power - Output/Channel (Max)
1.3 W
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Connection Type to IGBT
Direct
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Driving Mode
직접 독립형
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Gate Peak Current (Max)
+30 A
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Interface Type
전기
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Isolation Technology
절연
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Isolation Type
강화형
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Logic Input Voltage
15
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Max Switching Frequency
92.0 kHz
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Number of Channels
2
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Temperature - Operating (Min)
-40 ℃
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Temperature - Operating (Max)
85 ℃
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Temperature - Storage (Min)
-40 ℃
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Temperature - Storage (Max)
50 ℃
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Data Sheet
View Data Sheet
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IGBT Voltage Class
1700 V
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Module Housing
62mm
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Supported Module(s)
CAS300M17BM2
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IGBT Manufacturer
Wolfspeed
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Supported Module Type
탄화규소
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Gate Turn-on Voltage
+20.0 V
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Gate Turn-off Voltage
-5.0 V
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Supported Topologies
2단계 전압 소스, 3단계 NP 클램프 - 유형 1, 3단계 NP 클램프 - 유형 2
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Protection Features
고급 능동 클램핑, 과전압, 단락, 저전압 (2차측), 저전압 (1차측)
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Technology
SCALE-2
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Supply Voltage (Typ)
15 V
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Power - Output/Channel (Max)
1.3 W
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Connection Type to IGBT
Direct
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Driving Mode
직접 독립형
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Gate Peak Current (Max)
+30 A
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Interface Type
전기
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Isolation Technology
절연
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Isolation Type
강화형
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Logic Input Voltage
15
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Max Switching Frequency
92.0 kHz
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Number of Channels
2
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Temperature - Operating (Min)
-40 ℃
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Temperature - Operating (Max)
85 ℃
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Temperature - Storage (Min)
-40 ℃
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Temperature - Storage (Max)
50 ℃
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Data Sheet
View Data Sheet
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IGBT Voltage Class
1200 V
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Module Housing
62mm
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Supported Module(s)
CM450DY-24T
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IGBT Manufacturer
Mitsubishi
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Supported Module Type
IGBT
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Gate Turn-on Voltage
+15.0 V
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Gate Turn-off Voltage
-10.0 V
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Supported Topologies
2단계 전압 소스, 3단계 NP 클램프 - 유형 1, 3단계 NP 클램프 - 유형 2
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Protection Features
고급 능동 클램핑, 과전압, 단락, 저전압 (2차측), 저전압 (1차측)
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Technology
SCALE-2
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Supply Voltage (Typ)
15 V
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Power - Output/Channel (Max)
1.3 W
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Connection Type to IGBT
Direct
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Driving Mode
직접 독립형
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Gate Peak Current (Max)
+30 A
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Interface Type
전기
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Isolation Technology
절연
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Isolation Type
강화형
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Logic Input Voltage
15
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Max Switching Frequency
92.0 kHz
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Number of Channels
2
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Temperature - Operating (Min)
-40 ℃
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Temperature - Operating (Max)
85 ℃
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Temperature - Storage (Min)
-40 ℃
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Temperature - Storage (Max)
50 ℃
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Data Sheet
View Data Sheet
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IGBT Voltage Class
1200 V
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Module Housing
62mm
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Supported Module(s)
FF200R12KS4
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IGBT Manufacturer
Infineon
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Supported Module Type
IGBT
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Gate Turn-on Voltage
+15.0 V
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Gate Turn-off Voltage
-10.0 V
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Supported Topologies
2단계 전압 소스, 3단계 NP 클램프 - 유형 1, 3단계 NP 클램프 - 유형 2
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Protection Features
고급 능동 클램핑, 과전압, 단락, 저전압 (2차측), 저전압 (1차측)
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Technology
SCALE-2
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Supply Voltage (Typ)
15 V
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Power - Output/Channel (Max)
1.3 W
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Connection Type to IGBT
Direct
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Driving Mode
직접 독립형
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Gate Peak Current (Max)
+30 A
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Interface Type
전기
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Isolation Technology
절연
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Isolation Type
강화형
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Logic Input Voltage
15
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Max Switching Frequency
92.0 kHz
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Number of Channels
2
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Temperature - Operating (Min)
-40 ℃
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Temperature - Operating (Max)
85 ℃
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Temperature - Storage (Min)
-40 ℃
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Temperature - Storage (Max)
50 ℃
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제품 상세 정보
The Plug-and-Play 2SP0230T2x0 gate driver family is a compact double-channel gate driver designed for the operation of 62 mm half-bridge SiC and IGBT power modules up to 1700 V. The drivers feature electrical interface with built-in DC/DC power supplies. Power Integrations’ Advanced Active Clamping allows to turn-off safely within an extended DC-link voltage range.
This board requires a signal interface (Molex 53258-1029), available for order from Avnet, Digikey or Mouser.
Product Highlights
Highly Integrated, Compact Footprint
- Ready-to-use gate driver solution for 62 mm half-bridge SiC and IGBT power modules
- Dual channel gate driver
- Electrical interface
- The clearance and creepage distances are defined according to IEC60077-1 providing reinforced insulation up to 1700 V blocking voltage in 2-level applications and basic insulation for 3-level applications using modules up to 1200 V blocking voltage
- ±30 A peak output gate current
- 1.3 W output power per channel at maximum ambient temperature
- -40 °C to 85 °C operating ambient temperature
Protection / Safety Features
- Short-circuit protection
- Advanced Active Clamping (AAC)
- Undervoltage lock-out (UVLO) protection
- RoHS compliant
