Data Sheets

Compact, high-voltage, high-power, 35 A gate current and 2 x 5 W output power

Highest power density for high-power and high-frequency, 50 A gate current and 2 x 6 W output power

Highest power density for high-power and high-frequency, 50 A gate current and 2 x 6 W output power

Second source for Infineon™ 2ED300C17-S, 30 A gate current and 2 x 4 W drive power

Second source for Infineon™ 2ED300C17-S, 30 A gate current and 2 x 4 W drive power

Second source for Infineon™ 2ED300C17-S, 30 A gate current and 2 x 4 W drive power

Second source for Infineon™ 2ED300C17-S, 30 A gate current and 2 x 4 W drive power

Isolated Master Control (IMC) Gate Driver for Half-Bridge Power Modules in high voltage package up to 3300 V Electrical Interface

Isolated Master Control (IMC) for Driving Half-Bridge Power Modules up to 3300 V via an Optical Interface

Isolated Master Control (IMC) for 3300 V Half-Bridge Power Modules

Isolated Master Control (IMC) for Driving Half-Bridge Power Modules with Negative Temperature Coefficient (NTC) Temperature Sensing via Electrical Interface

Isolated Master Control Gate Driver for Half-Bridge Power Modules in High-Voltage Package up to 3300 V Electrical Interface

Isolated Master Control Gate Driver for Half-Bridge Power Modules in High-Voltage Package up to 3300 V Optical Interface

Dual-channel plug-and-play gate drivers for operation of single LV100 (Mitsubishi), XHP™ 2 (Infineon), HPnC (Fuji) and equivalent semiconductor modules up to 2300 V blocking voltage

Module Adapted Gate Driver (MAG) for Driving Half-Bridge Power Modules via Electrical Interface

Module Adapted Gate Driver (MAG) for Half-Bridge Power Modules Electrical Interface

Module Adapted Gate Driver (MAG) for Half-Bridge Power Modules Electrical Interface

Module Adapted Gate Driver (MAG) for 1700 V Half-Bridge Power Modules

Module Adapted Gate Driver (MAG) for Driving Half-Bridge Power Modules with Negative Temperature Coefficient (NTC) Temperature Sensing via Electrical Interface

Module Adapted Gate Driver for Half-Bridge Power Modules in High-Voltage Package up to 3300 V