EE Training Days Webinar – Can 1700 V GaN Replace SiC?

Power Integrations just announced the industry’s first 1700 V gallium nitride (GaN) power device. In our first webinar after the launch of the 1700 V PowiGaN-based InnoMux-2 flyback switcher ICs, we will discuss the significance of this technical achievement and the potential to replace high-cost silicon carbide (SiC) transistors with GaN devices in high-voltage applications. Register today.

Is 1700 V GaN the End for SiC?

• Thursday, November 21
• 2:00 PM to 3:00 PM ET
• David Chen, Senior Director of Applications Engineering,
  Power Integrations

Initially adopted in the rapid charging market for high-efficiency adapters, GaN-based switchers are breaking out now to more applications. The Remaining questions are how high GaN can go in voltage and how competitive it can be versus SiC in high voltage applications.

In this webinar, you will learn:

• The benefits of GaN over SiC
• Important considerations for high-voltage designs
• Relative performance among device technologies
• How reliability is assessed for GaN