ECPE Tutorial - Gate Drivers and Control Circuits of IGBTs and MOSFETs

Gate Drivers and control circuits are the interface between the signal level and the power stage within a power electronic system. They are responsible for a safe operation of the power switches.

The development of gate driving circuits for ideal operation of power electronics necessitates profound knowledge of semiconductor characteristics (MOSFETs, IGBTs), influence of gate voltage on switching behavior, power supply of galvanically isolated parts of the circuitry, parasitics, and protection functions.

Beginning with MOSFETs, switching behavior will be explained, and then derived for super-junction MOSFETs and IGBTs. As the mechanisms are basically the same for all voltage/power classes, no differentiation will be done between high and low power devices.

In the context of the development and adoption of innovative Wide-Band-Gap semiconductors, new challenges concerning robust operation at very fast switching speed and frequencies are also addressed to attain the expected gains at system level.

With this tutorial we want to transfer the necessary knowledge to drive and control IGBTs and MOSFETs in a safe way, both for modules and discrete devices

Wednesday, 20 March 2024

09:00 a.m.

Gate Driver Isolation and Isolation Coordination

• Galvanic Isolation
• Level-Shifter
• Bootstrap Power Supply

Michael Hornkamp

11:00 a.m.

Fast Switching and Common Mode Noise Immunity

Michael Hornkamp