2SC0115T
Smallest IGBT gate-driver for 90 kW-500 kW inverters, SCALE-2+ Technology, galvanic solution for 1200 V IGBT drivers, advanced active clamping or SSD
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Description
Smallest IGBT gate-driver for 90 kW-500 kW inverters, SCALE-2+ Technology, galvanic solution for 1200 V IGBT drivers, advanced active clamping or SSD
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Max Breakdown Voltage
1200 V
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Power Switch
IGBT, SiC MOSFET
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1SC0450
Single-Channel SCALE-2 Driver Core 1SC0450V and 1SC0450E, highest integration level, flexible 4.5 kV and 6.5 kV gate drives with integrated DC/DC converter and fiber optic link
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Description
Single-Channel SCALE-2 Driver Core 1SC0450V and 1SC0450E, highest integration level, flexible 4.5 kV and 6.5 kV gate drives with integrated DC/DC converter and fiber optic link
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Max Breakdown Voltage
4500 V, 6500 V
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Power Switch
IGBT
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2SC0106T
Dual-channel SCALE-2+ driver core, highest integration level for inverter designs from 37 to 110 kVA, integrated short-circuit soft shutdown function
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Description
Dual-channel SCALE-2+ driver core, highest integration level for inverter designs from 37 to 110 kVA, integrated short-circuit soft shutdown function
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Max Breakdown Voltage
1200 V
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Power Switch
IGBT
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2SD300C17
Dual-channel SCALE-2 driver core, highest integration level, second source for Infineon™ 2ED300C17-S, 30 A gate current and 2 x 4 W drive power
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Description
Dual-channel SCALE-2 driver core, highest integration level, second source for Infineon™ 2ED300C17-S, 30 A gate current and 2 x 4 W drive power
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Max Breakdown Voltage
1700 V
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Power Switch
IGBT
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2SC0535T
Dual-Channel SCALE-2 Driver Core for 3.3 kV IGBTs, highest intergration level, compact, high-voltage, high-power, 35 A gate current and 2 x 5 W output power
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Description
Dual-Channel SCALE-2 Driver Core for 3.3 kV IGBTs, highest intergration level, compact, high-voltage, high-power, 35 A gate current and 2 x 5 W output power
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Max Breakdown Voltage
3300 V
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Power Switch
IGBT, SiC MOSFET
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2SC0650P
Dual-channel SCALE-2 driver core with Planar transformers, highest integration level, highest power density for high-power and high-frequency, 50 A gate current and 2 x 6 W output power
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Description
Dual-channel SCALE-2 driver core with Planar transformers, highest integration level, highest power density for high-power and high-frequency, 50 A gate current and 2 x 6 W output power
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Max Breakdown Voltage
1700 V
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Power Switch
IGBT, SiC MOSFET
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2SC0435T
Dual-channel SCALE-2+ driver core used by new 2SC0435T2F1-17, 2SC0435T2G1-17, 2SC0435T2H0-17, highest integration level, ultra-compact, high-quality 35 A gate current, and 2 x 4 W output power
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Description
Dual-channel SCALE-2+ driver core used by new 2SC0435T2F1-17, 2SC0435T2G1-17, 2SC0435T2H0-17, highest integration level, ultra-compact, high-quality 35 A gate current, and 2 x 4 W output power
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Max Breakdown Voltage
1700 V
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Power Switch
IGBT, SiC MOSFET
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2SC0108T
Dual-channel SCALE-2+ driver core, highest integration level ultra-compact, high-quality 8A gate current and 2 x 1 W output power
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Description
Dual-channel SCALE-2+ driver core, highest integration level ultra-compact, high-quality 8A gate current and 2 x 1 W output power
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Max Breakdown Voltage
1700 V
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Power Switch
IGBT
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1SC2060P
Single-channel SCALE-2 driver core with Planar transformers, 60 A gate current for driving large IGBT modules in parallel, 20 W output power for high-frequency applications up to 500 kHz
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Description
Single-channel SCALE-2 driver core with Planar transformers, 60 A gate current for driving large IGBT modules in parallel, 20 W output power for high-frequency applications up to 500 kHz
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Max Breakdown Voltage
1700 V
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Power Switch
IGBT, SiC MOSFET
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