Product Flyer – SiC MOSFET Gate Driver Cores 600 V – 3300 V SiC MOSFET Gate Driver Cores (600 V – 3300 V) with variable gate voltage by VEE circuit (0 V – 25 V, 0 V – 10 V) 下载PDF 查看PDF Login Required A MyPI account is required to receive email notifications for document updates. Please login or register for an account to continue. Continue × 文件更新请通知我 产品 2SC0115T 2SC0650P 2SC0535T 2SC0435T 1SC2060P
