白皮書 - 超越 1200 V：用於高可靠性電動汽車和工業應用的橫向 GaN HEMTs
PI 首創採用 1250 V 氮化鎵的電源開關 IC，具有顯著的瞬態過電壓能力，這對於需要高電壓和高可靠性的電動汽車及工業應用至關重要。在 2024 年 PCIM Europe 展會上，我們的 PowiGaN 專家 Kamal Varadarajan 深度分享這一開創性技術。
下載白皮書：Reaching Beyond 1200 V: Lateral GaN HEMTs for High-Reliability EV and Industrial Applications
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