解决方案查找器 技術支援
請填寫此表格以索取以下內容:
 Reaching Beyond 1200 V: Lateral GaN HEMTs for High-Reliability EV and Industrial Applications.
提交即表示您同意Power Integrations根據我們的隱私政策使用和處理您的數據。
CAPTCHA
Image CAPTCHA

Enter the characters shown in the image.

PI's industry-first 1250 V GaN-based switcher ICs allow significant transient overvoltage capability, which is crucial to EV and industrial applications that require high voltage and high reliability.