2SC0108T2H0C-17
Dual-channel SCALE-2+ driver core, highest integration level ultra-compact, high-quality 8A gate current and 2 x 1 W output power
產品詳情
2SC0108T is a new SCALE-2 dual-driver core that combines compact design and high reliability with broad applicability. The 2SC0108T drives all usual IGBT modules up to 600 A /1200 V or 450 A / 1700 V. Embedded paralleling allows simple inverter design even at higher power ratings. Multi-level topologies are also supported.
Advantages of the Technology
The 2SC0108T is our most compact driver core available for industrial applications, with a footprint of only 45 x 34.3 mm and profile of 16 mm. The SCALE-2 chipset reduces the component count by up to 80% compared to conventional solutions, thus significantly increasing reliability and reducing costs.
The 2SC0108T combines a complete two-channel driver core with all components required for driving, such as an isolated DC/DC converter, short-circuit protection as well as supply voltage monitoring. Each of the two output channels is electrically isolated from the primary side and the other secondary channel.
An output current of 8 A and 1 W drive power is available per channel, making the 2SC0108T a suitable choice for universal usage in small and medium power applications. The driver provides a gate voltage swing of +15 V / –8 V. The turn-on voltage is regulated to maintain a stable 15 V regardless of the output power level.
Excellent EMC performance enables safe and reliable operation even in demanding industrial applications.
Driving Parallel-Connected IGBTs
The driver allows direct parallel connection of any number of IGBT modules with individual drivers. This new, pioneering concept makes it practical for the first time to build converter series with discrete modules as well as parallel-connected IGBTs without any significant additional development effort.
產品規格
最大開關頻率 | 50.00 kHz |
IGBT電壓等級 | 1700 V |
技術 | SCALE-2+ |
輸出功率/通道 - 最大 | 1.20 W |
接口類型 | 電氣 |
通道數 | 2 |
閘極峰值電流 (最大) | +8 A |
產品類別 | 電路板 |
Product Sub-Type | 驅動核 |
支持的模組種類 |
IGBT
N溝道MOSFET
|
主/外圍 | 無 |
支持的拓撲 |
兩電平電壓源
三電平NP鉗位 - 類型1
三電平NP鉗位 - 類型2
多電平NP鉗位
|
保護功能 |
基本有源鉗位
短路
軟關斷
欠壓(次級側)
欠壓(初級側)
|
保形塗層? | 是 |
驅動模式 |
半橋
直接獨立
|
邏輯輸入電壓 | 5 |
電源電壓 (典型) | 15.00 V |
閘極導通電壓 | +15.00 V |
閘極關斷電壓 | --9.40 V |
時間 - 輸出上升 | 17.00 ns |
時間 - 輸出下降 | 15.00 ns |
隔離技術 | 電隔離 |
隔離類型 | 加強型 |
閘極峰值電流 (最小) | -8 |