![SCALE-2 2SC0108T Module SCALE-2 2SC0108T Module](/sites/default/files/images/products/PI-1600x1200%402x_SCALE-2-2SC0108T.png)
2SC0108T2F1C-17
Dual-channel SCALE-2+ driver core, highest integration level ultra-compact, high-quality 8A gate current and 2 x 1 W output power
์ ํ ์์ธ ์ ๋ณด
2SC0108T is a new SCALE-2 dual-driver core that combines compact design and high reliability with broad applicability. The 2SC0108T drives all usual IGBT modules up to 600 A /1200 V or 450 A / 1700 V. Embedded paralleling allows simple inverter design even at higher power ratings. Multi-level topologies are also supported.
Advantages of the Technology
The 2SC0108T is our most compact driver core available for industrial applications, with a footprint of only 45 x 34.3 mm and profile of 16 mm. The SCALE-2 chipset reduces the component count by up to 80% compared to conventional solutions, thus significantly increasing reliability and reducing costs.
The 2SC0108T combines a complete two-channel driver core with all components required for driving, such as an isolated DC/DC converter, short-circuit protection as well as supply voltage monitoring. Each of the two output channels is electrically isolated from the primary side and the other secondary channel.
An output current of 8 A and 1 W drive power is available per channel, making the 2SC0108T a suitable choice for universal usage in small and medium power applications. The driver provides a gate voltage swing of +15 V / โ8 V. The turn-on voltage is regulated to maintain a stable 15 V regardless of the output power level.
Excellent EMC performance enables safe and reliable operation even in demanding industrial applications.
Driving Parallel-Connected IGBTs
The driver allows direct parallel connection of any number of IGBT modules with individual drivers. This new, pioneering concept makes it practical for the first time to build converter series with discrete modules as well as parallel-connected IGBTs without any significant additional development effort.
๋ช ์ธ์
์ต๋ ์ค์์นญ ์ฃผํ์ | 50.00 kHz |
IGBT ์ ์ ๋ฑ๊ธ | 1700 V |
๊ธฐ์ | SCALE-2+ |
์ถ๋ ฅ ์ ๋ ฅ / ์ฑ๋-์ต๋ | 1.20 W |
์ธํฐํ์ด์ค ์ ํ | ์ ๊ธฐ |
์ฑ๋ ์ | 2 |
๊ฒ์ดํธ ํผํฌ ์ ๋ฅ (์ต๋) | +8 A |
์ํ ์ ํ | ํ๋ก ๊ธฐํ |
Product Sub-Type | ๋๋ผ์ด๋ฒ ์ฝ์ด |
์ง์๋๋ ๋ชจ๋ ์ ํ |
IGBT
N์ฑ๋ MOSFET
|
๋ฉ์ธ / ์ฃผ๋ณ | ํด๋น ์์ |
์ง์๋๋ ํ ํด๋ก์ง |
2๋จ๊ณ ์ ์ ์์ค
3๋จ๊ณ NP ํด๋จํ - ์ ํ 1
3๋จ๊ณ NP ํด๋จํ - ์ ํ 2
๋ค๋จ๊ณ NP ํด๋จํ
|
๋ณดํธ ๊ธฐ๋ฅ |
๊ธฐ๋ณธ ๋ฅ๋ ํด๋จํ
๋จ๋ฝ
์ํํธ ์
ง๋ค์ด
์ ์ ์ (2์ฐจ์ธก)
์ ์ ์ (1์ฐจ์ธก)
|
๋ฑ๊ฐ ์ฝํ ? | ์ |
๋๋ผ์ด๋ธ ๋ชจ๋ |
ํํ๋ธ๋ฆฌ์ง
์ง์ ๋
๋ฆฝํ
|
๋ ผ๋ฆฌ ์ ๋ ฅ ์ ์ | 5 |
๊ณต๊ธ ์ ์ (์ผ๋ฐ) | 15.00 V |
๊ฒ์ดํธ ํด์จ ์ ์ | +15.00 V |
๊ฒ์ดํธ ํด ์คํ ์ ์ | --9.40 V |
์๊ฐ - ์ถ๋ ฅ ์์น | 17.00 ns |
์๊ฐ - ์ถ๋ ฅ ํ๋ฝ | 15.00 ns |
๊ฒฉ๋ฆฌ ๊ธฐ์ | ์ ์ฐ |
๊ฒฉ๋ฆฌ ์ ํ | ๊ฐํํ |
๊ฒ์ดํธ ํผํฌ ์ ๋ฅ (์ต์) | -8 |