2SC0435T2G1-17
Dual-channel SCALE-2+ driver core used by new 2SC0435T2F1-17, 2SC0435T2G1-17, 2SC0435T2H0-17, highest integration level, ultra-compact, high-quality 35 A gate current, and 2 x 4 W output power
제품 상세 정보
2SC0435T is a SCALE-2 dual-driver core that combines compact design and high reliability with broad applicability. The 2SC0435T drives all common IGBT modules up to 3600 A / 1700 V. Embedded-paralleling allows simple inverter design even at higher power ratings. Multi-level topologies are also supported
Advantages of the Technology
The 2SC0435T is one of the most compact driver core available for industrial applications, with a footprint of only 57.2 x 51.6 mm and profile of 20 mm. The SCALE-2+ chipset reduces the component count by up to 85% compared to conventional solutions, thus significantly increasing reliability and reducing costs.
The 2SC0435T combines a complete two-channel driver core with all components required for driving, including: isolated DC/DC converter; short-circuit protection; as well as supply voltage monitoring. Each of the two output channels is electrically-isolated from the primary side and the other secondary channel.
IGBT Mode
An output current of 35 A and 4 W drive power is available per channel, making the 2SC0435T a suitable driver choice for both high-power modules and parallel-connected IGBT modules. In dedicated IGBT mode, the driver provides a gate voltage swing of +15 V / –10V. The turn-on voltage is regulated to maintain a stable 15 V regardless of the output power level.
Excellent EMC performance allows safe and reliable operation in even harsh industrial environments. The 2SC0435T is suited for high-power IGBTs with blocking voltages up to 1700 V.
MOSFET Mode
A dedicated MOSFET mode is implemented in the 2SC0435T. It allows any gate voltage swing of +10 V…+20 V / 0 V to make the most of the driver’s 100 kHz switching speed.
With its high output power, very short delay, and extremely small jitter, the 2SC0435T driver core has been specifically designed for high-power and ultra-fast switching, fully exploiting the capabilities of state-of-the-art MOS power devices.
Driving Parallel-Connected IGBTs
The driver allows direct parallel connection of any number of IGBT modules with individual drivers. This new, pioneering concept makes it practical for the first time to build converter series with discrete modules as well as parallel-connected IGBTs without any significant additional development effort.
명세서
최대 스위칭 주파수 | 100.00 kHz |
IGBT 전압 등급 | 1700 V |
기술 | SCALE-2+ |
출력 전력 / 채널-최대 | 6.00 W |
인터페이스 유형 | 전기 |
채널 수 | 2 |
게이트 피크 전류 (최대) | +35 A |
상품 유형 | 회로 기판 |
Product Sub-Type | 드라이버 코어 |
지원되는 모듈 유형 |
IGBT
N채널 MOSFET
|
메인 / 주변 | 해당 없음 |
지원되는 토폴로지 |
2단계 전압 소스
3단계 NP 클램프 - 유형 1
3단계 NP 클램프 - 유형 2
다단계 NP 클램프
|
보호 기능 |
고급 능동 클램핑
단락
저전압 (2차측)
저전압 (1차측)
|
드라이브 모드 |
하프브리지
직접 독립형
|
논리 입력 전압 | 5 |
공급 전압 (일반) | 15.00 V |
게이트 턴온 전압 | +15.00 V |
게이트 턴 오프 전압 | --10.10 V |
시간 - 출력 상승 | 20.00 ns |
시간 - 출력 하락 | 20.00 ns |
격리 기술 | 절연 |
격리 유형 | 강화형 |
게이트 피크 전류 (최소) | -35 |