![Typical Application/Performance](/sites/default/files/styles/product_image/public/images/schematics/innoswitchce_schematic.png?itok=34kTGV1v)
![InnoSwitch-CE in eSOP-R16B Package InnoSwitch-CE in eSOP-R16B Package](/sites/default/files/styles/product_image/public/images/products/innoswitch_ce_package_0.png?itok=9J7SbEz6)
![Typical Application/Performance](/sites/default/files/styles/teaser_thumb/public/images/schematics/innoswitchce_schematic.png?itok=I4AVBJK7)
![InnoSwitch-CE in eSOP-R16B Package InnoSwitch-CE in eSOP-R16B Package](/sites/default/files/styles/teaser_thumb/public/images/products/innoswitch_ce_package_0.png?itok=e1YQQVgI)
InnoSwitch-CE
集成650 V MOSFET的恒压/恒流离线反激式开关IC
此产品持续销售中,并已推出新版本。
Suggested Alternative:
InnoSwitch3-CE
应用
集成650 V MOSFET的恒压/恒流离线反激式开关IC
InnoSwitch™-CE系列IC可极大简化低压大电流电源的开发和制造,尤其是那些采用紧凑外壳或需要满足高效率要求的电源。InnoSwitch-CP的架构极具革新性,因为该器件同时将初级和次级控制器以及检测元件和符合安全标准的反馈机制集成到了单个IC中。由于元件间距更为紧凑并且创新地采用了集成通讯链路,因此能够对次级侧同步整流MOSFET进行精确控制并对初级侧MOSFET开关进行优化。这样可增强系统可靠性,提高在从满载到低功率待机的所有功率范围内的效率水平。